Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
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- Pages.456-456
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- 2013
Irradiation-Induced Electronic Structure Modifications in ZnO Thin Films Studied by X-Ray Absorption Spectroscopy
- Gautam, Sanjeev (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Yang, Bum Jin (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Lee, Yunju (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Jung, Ildoo (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Won, Sung Ok (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Song, Jonghan (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Asokan, K. (Inter-University Accelerator Center, Aruna Asaf Ali Marg) ;
- Chae, Keun Hwa (Advanced Analysis Center, Korea Institute of Science and Technology)
- Published : 2013.02.18
Abstract
We report the modifications in the electronic structureof ZnO thin films induced by swift heavy ion (SHI) irradiated ZnO thin films by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy at O K-edge was performed at BL10D XAS-KIST beamline at Pohang Accelerator Lab (PAL). ZnO films of 250 nm thickness oriented in [200] plane deposited by RF magnetron sputtering using equal
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