• Nuclear Engineering and Technology
• /
• v.52 no.11
• /
• pp.2585-2593
• /
• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.456-456
• /
• 2013

We report the modifications in the electronic structureof ZnO thin films induced by swift heavy ion (SHI) irradiated ZnO thin films by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy at O K-edge was performed at BL10D XAS-KIST beamline at Pohang Accelerator Lab (PAL). ZnO films of 250 nm thickness oriented in [200] plane deposited by RF magnetron sputtering using equal $Ar:O_2$ atmosphere and air annealed at $500^{\circ}C$ for 6 hours for stability were irradiated with 120 MeV Au and 100 MeV O beams separately with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$. High Resolution X-ray diffraction and NEXAFS analysis indicates significant changes in the electronic structure and the SHI effect is different for Ag and O-beams. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization. The NEXAFS results will be presented in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.315-315
• /
• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• Nuclear Engineering and Technology
• /
• v.51 no.5
• /
• pp.1428-1435
• /
• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.312-312
• /
• 2012

Magnesium oxide has become focus for research activities due to its use in magnetic tunnel junctions and for understanding of do ferromagnetism. Theoretical investigations on such type of system indicate that the presence of defects greater than a threshold value is responsible for the magnetic behaviour. It has also been shown experimentally that by decreasing the film thickness and size of nanoparticles, enhancement/increase in magnetization can be achieved. Apart from the change in dimension, swift heavy ions (SHI) are well known for creating defects and modifying the properties of the materials. In the present work, we have studied the irradiation induced effects in magnesium oxide thin film deposited on quartz substrate via X-ray absorption spectroscopy (XAS). Magnesium oxide thin films of thickness 50nm were deposited on quartz substrate by using e-beam evaporation method. These films were irradiated by 200 MeV Ag15+ ion beam at fluence of $1{\times}10^{11}$, $5{\times}10^{11}$, $1{\times}10^{12}$, $3{\times}10^{12}$ and $5{\times}10^{12}ions/cm^2$ at Nuclear Science Centre, IUAC, New Delhi (India). The grain size was observed (as studied by AFM) to be decreased from 37 nm (pristine film) to 23 nm ($1{\times}10^{12}ions/cm^2$) and thereafter it increases upto a fluence of $5{\times}10^{12}ions/cm^2$. The electronic structure of the system has been investigated by X-ray absorption spectroscopy (XAS) measurements performed at the high energy spherical grating monochromator 20A1 XAS (HSGM) beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. Oxides of light elements like MgO/ZnO possess many unique physical properties with potentials for novel application in various fields. These irradiated thin films are also studied with different polarization (left and right circularly polarized) of incident x-ray beam at 05B3 EPU- Soft x-ray scattering beamline of NSRRC. The detailed analysis of observed results in the wake of existing theories is discussed.