한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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- Pages.430-430
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- 2013
Fabrication of Etched Graphene/CuO Nanowires as Field Effect Transistors
- Hien, Vu Xuan (School of Materials Science and Engineering, Kyungpook National University) ;
- Kim, Se-Yun (School of Materials Science and Engineering, Kyungpook National University) ;
- Kim, MyeongEon (School of Materials Science and Engineering, Kyungpook National University) ;
- Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University) ;
- Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) ;
- Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University)
- 발행 : 2013.02.18
초록
Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and