• Title/Summary/Keyword: CuO nanowires

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A Facile Method for the Synthesis of Freestanding CuO Nanoleaf and Nanowire Films

  • Zhao, Wei;Jung, Hyunsung
    • Journal of the Korean institute of surface engineering
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    • v.51 no.6
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    • pp.360-364
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    • 2018
  • A facile method to fabricate freestanding CuO nanoleaves and CuO nanowires-based films was demonstrated. $Cu(OH)_2$ nanoleaves and nanowires were prepared by a hydrolysis reaction in aqueous solution including pyridine and NaOH with the tailored concentrations at room temperature. The films of freestanding CuO nanoleaves and CuO nanowires can be successfully obtained via the simple vacuum infiltration following a thermal dehydration reaction. The morphologies and crystallinity of the $Cu(OH)_2$ nanoleaves/nanowires and CuO nanoleaves/nanowires were characterized by XRD, SEM, TEM and FT-IR. The films fabricated with freestanding CuO nanoleaves and nanowires in this study may be applicable for building high-efficiency organic binder-free devices, such as gas sensors, batteries, photoelectrodes for water splitting and so on.

Enhancement of Field Emission Characteristics of CuO Nanowires Formed by Wet Chemical Process (습식공정으로 형성된 구리산화물 나노와이어의 전계방출특성 향상)

  • Sung Woo-Yong;Kim Wal-Jun;Lee Seung-Min;Lee Ho-Young;Park Kyung-Ho;Lee Soonil;Kim Yong-Hyup
    • Journal of the Korean institute of surface engineering
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    • v.37 no.6
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    • pp.313-318
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    • 2004
  • Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

Large-Scale Synthesis of Cu2O Nanowires by Thermal Oxidation Method (열 산화법을 이용한 Cu2O 나노선의 대면적 합성)

  • Lee, Geun-Hyoung
    • Korean Journal of Materials Research
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    • v.24 no.7
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    • pp.388-392
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    • 2014
  • $Cu_2O$ nanowires were synthesized at large scale on copper plate by thermal oxidation in air. The effect of oxidation time and temperature on the morphology of the nanowires was examined. The oxidation time had no effect on the diameter of the nanowires, while it had a great effect on the density and the length of the nanowires. The density and the length of the nanowires increased, and then decreased, with increasing oxidation time. The oxidation temperature had a tremendous effect on the size-distribution as well as the density of the nanowires. When the oxidation temperature was $700^{\circ}C$, uniform size-distribution and high density of the nanowires was achieved. At lower and higher temperatures, the density of the nanowires was lower, and they displayed a broader size-distribution. It is suggested that the $Cu_2O$ nanowires were grown via a vapor-solid mechanism because no catalyst particles were observed at the tips of the nanowires.

Hydrogen sensing of Nano thin film and Nanowire structured cupric oxide deposited on SWNTs substrate: A comparison

  • Hoa, Nguyen Duc;Quy, Nguyen Van;O, Dong-Hun;Wei, Li;Jeong, Hyeok;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.52.1-52.1
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    • 2009
  • Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

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Fabrication of Etched Graphene/CuO Nanowires as Field Effect Transistors

  • Hien, Vu Xuan;Kim, Se-Yun;Kim, MyeongEon;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.430-430
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    • 2013
  • Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

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Thermite Reaction Between CuO Nanowires and Al for the Crystallization of a-Si

  • Kim, Do-Kyung;Bae, Jung-Hyeon;Kim, Hyun-Jae;Kang, Myung-Koo
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.234-237
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    • 2010
  • Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

Fabrication Process of Single CuO Nanowire Devices

  • Vu, Xuan Hien;Jo, Kwang-Min;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.134-138
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    • 2014
  • One-dimensional nanostructures such as nanowires have been extensively investigated as a promising type of material for applications of nanoscale technology. The fabrication of single-nanowire devices are consequently important and interesting. This study introduced a feasible method for growing CuO nanowires on Cu foils. The nanowires had diameters of 10~150 nm and lengths of more than $7{\mu}m$ and were grown by means of thermal oxidation in a vacuum. They were entirely and uniformly grown over the Cu foil surfaces and could be extracted and dispersed in an ethanol solution for further purposes. In addition, a simple fabrication method for realizing device functionality from a single CuO nanowire was reported. Fabricated devices were carefully checked by field-emission scanning electron microscopy (SEM). The probability of the realization of a single-CuO-nanowire device relative to that of all other types was estimated to be around 25%. Finally, the I-V characteristics of the devices were analyzed.

Catalytic synthesis and properties of β-Ga2O3 nanowires by metal organic chemical vapor deposition (MOCVD를 이용한 금속 촉매 종류에 따른 β-Ga2O3 나노 와이어의 제작과 특성)

  • Lee, Seunghyun;Lee, Seoyoung;Jeong, Yongho;Lee, Hyojong;Ahn, Hyungsoo;Yang, Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.1
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    • pp.1-8
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    • 2017
  • Catalytic synthesis and properties of ${\beta}-Ga_2O_3$ nanowires grown by metal organic chemical vapor deposition are reported. Au, Ni and Cu catalysts were suitable for the growth of $Ga_2O_3$ nanowires under our experimental conditions. The $Ga_2O_3$ nanowires grown by using Au, Ni and Cu catalysts showed different growth rates and morphologies in each case. We found the $Ga_2O_3$ nanowires were grown by the Vapor-Solid (VS) process when Ni was used as a catalyst while the Vapor-Liquid-Solid (VLS) was a dominant process in case of Au and Cu catalysts. Also, we found nanowires showed different optical properties depend on catalytic metals. On the other hand, for the cases of Ti, Sn and Ag catalysts, nanowires could not be obtained under the same condition of Au, Cu and Ni catalytic synthesis. We found that these results are related to the different characteristics of each catalyst, such as, melting points and phase diagrams with gallium metal.

Synthesis and Characterization of Copper Oxide nanowires by Facile Heating under Static Air Condition

  • Kwon, Tae-Ha;Choi, Hyek-Hwan;Chung, Wan-Young
    • Journal of information and communication convergence engineering
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    • v.8 no.1
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    • pp.99-102
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    • 2010
  • Large-scaled area and aligned copper oxide nanowires have been synthesized by a vapor-phase approach to the facial synthesis of copper oxide nanowires supported on the surface of a copper gasket. The effects of annealing temperature and time were investigated. Long and aligned nanowires can only formed within a narrow temperature range from 400 to $500^{\circ}C$ for 4 hrs. Annealing copper gasket in static air produces large-area, uniform, but not well vertically aligned nanowires along the copper gasket surface. The surface of copper gasket is converted into bicrystal CuO nanowires was observed after the copper gasket is annealed under static air condition.