한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2012년도 춘계학술발표대회
- /
- Pages.110.1-110.1
- /
- 2012
Improvement in the negative bias stability on the water vapor permeation barriers on Hf doped $SnO_x$ thin film transistors
- 한동석 (한양대학교 나노반도체공학과) ;
- 문대용 (한양대학교 나노반도체공학과) ;
- 박재형 (한양대학교 나노반도체공학과) ;
- 강유진 (한양대학교 나노반도체공학과) ;
- 윤돈규 (한양대학교 신소재공학과) ;
- 신소라 (한양대학교 신소재공학과) ;
-
박종완
(한양대학교 신소재공학부)
- Han, Dong-Seok ;
- Mun, Dae-Yong ;
- Park, Jae-Hyeong ;
- Gang, Yu-Jin ;
- Yun, Don-Gyu ;
- Sin, So-Ra ;
-
Park, Jong-Wan
- 발행 : 2012.05.17
초록
Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work,
키워드