한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2012년도 춘계학술발표대회
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- Pages.110.2-110.2
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- 2012
Antireflective ZTO/Ag bilayer-based transparent source and drain electrodes for highly transparent thin film transistors
- 발행 : 2012.05.17
초록
We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.