Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
- /
- Pages.451-451
- /
- 2012
InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED
- Kwon, Byoung-Wook (Future Convergence Research Division, Korea Institute of Science and Technology) ;
- Son, Dong-Ick (Future Convergence Research Division, Korea Institute of Science and Technology) ;
- Lee, Bum-Hee (Future Convergence Research Division, Korea Institute of Science and Technology) ;
- Park, Dong-Hee (Future Convergence Research Division, Korea Institute of Science and Technology) ;
- Lim, Ki-Pil (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
- Woo, Kyoung-Ja (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
- Choi, Heon-Jin (Department of Materials Science and Engineering Yonsei University) ;
- Choi, Won-Kook (Future Convergence Research Division, Korea Institute of Science and Technology)
- Published : 2012.02.08
Abstract
Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.