Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
- /
- Pages.314-314
- /
- 2012
Modulation of Defect States in Co- and Fe-implanted Silicon by Rapid Thermal Annealing
- Lee, Dong-Uk (Department of physics, Hanyang University) ;
- Lee, Kyoung-Su (Department of physics, Hanyang University) ;
- Pak, Sang-Woo (Department of physics, Hanyang University) ;
- Suh, Joo-Young (Department of physics, Hanyang University) ;
- Kim, Eun-Kyu (Department of physics, Hanyang University) ;
- Lee, Jae-Sang (Accelerator Development Division, Korea Atomic Energy Research Institute)
- Published : 2012.02.08
Abstract
The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of