Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.310-310
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- 2012
Photoluminescence Studies of ZnO Thin Films on Porous Silicon Grown by Plasma-Assisted Molecular Beam Epitaxy
- Kim, Min-Su (Inje University) ;
- Nam, Gi-Woong (Inje University) ;
- Kim, So-A-Ram (Inje University) ;
- Lee, Dong-Yul (Samsung LED Co. Ltd.) ;
- Kim, Jin-Soo (Chonbuk National University) ;
- Kim, Jong-Su (Yeungnam University) ;
- Son, Jeong-Sik (Kyungwoon University) ;
- Leem, Jae-Young (Inje University)
- Published : 2012.02.08
Abstract
ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with