한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.356-356
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- 2010
임베다드 TFT 메모리 적용을 위한 결정화 방법에 따른 전기적 특성평가
Electrical properties of poly-Si TFT by crystallization method for embedded TFT memory application
- You, Hee-Wook (Kwangwoon University) ;
- Cbo, Won-Ju (Kwangwoon University)
- 발행 : 2010.06.16
초록
In this paper, Poly silicon thin-film transistors (poly-Si TFTs) with employed the SPC (Solid phase crystallization) and ELA (Excimer laser annealing) methods on glass panel substrate are fabricated to investigate the electrical poperies. Poly-Si TFTs have recess-channel structure with formated source/drain regions by LPCVD n+ poly Si in low