한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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- Pages.77-78
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- 2009
양자모델을 적용한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션
Simulation of channel dimension dependent conduction and charge distribution characteristics of silicon nanowire transistors using a quantum model
- Hwang, Min-Young (Kwangwoon Univ.) ;
- Choi, Chang-Yong (Kwangwoon Univ.) ;
- Koo, Sang-Mo (Kwangwoon Univ.)
- 발행 : 2009.04.03
초록
We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that