Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.199-200
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- 2009
Electrical characteristics of in-situ doped polycrystalline 3C-SiC thin films grown by CVD
CVD로 in-situ 도핑된 다결정 3C-SiC 박막의 전기적 특성
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Kim, Kang-San
(University of Ulsan) ;
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Chung, Gwiy-Sang
(University of Ulsan)
- Published : 2009.06.18
Abstract
This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at