한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 추계학술대회 논문집
- /
- Pages.53-53
- /
- 2009
ONO ($SiO_2/Si_3N_4/SiO_2$ ), NON($Si_3N_4/SiO_2/Si_3N_4$ )의 터널베리어를 갖는 비휘발성 메모리의 신뢰성 비교
- 발행 : 2009.11.12
초록
Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin