Coating of amorphous nitrides on carbon nanotubes and field emission properties

탄소 나노튜브에 대한 비정질 질화막의 코팅 및 전계방출 특성

  • Noh, Young-Rok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Jong-Pil (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 노영록 (한양대학교 전자전기제어계측 공학과) ;
  • 김종필 (한양대학교 전자전기제어계측 공학과) ;
  • 박진석 (한양대학교 전자전기제어계측 공학과)
  • Published : 2009.07.14

Abstract

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

Keywords