Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2008.06a
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- Pages.387-388
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- 2008
Study of Design and Fabrication of GaAs Varactor diode
GaAs 버렉터 다이오드의 설계와 제작에 관한 연구
- Choi, Seok-Gyu (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
- Baek, Young-Hyun (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
- Beak, Tea-Jong (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
- Kim, Mi-Ra (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
- Rhee, Jin-Koo (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University)
- 최석규 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
- 백용현 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
- 백태종 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
- 김미라 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
- 이진구 (동국대학교 전자공학과 밀리미터 신기술 연구센터)
- Published : 2008.06.18
Abstract
In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of
Keywords