한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.193-193
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- 2008
InGaP/GaAs 화합물 반도체 공정을 이용한 MMIC Diplexer 설계
Design of MMIC Diplexer using Eliptic Function Technique in InGaP/GaAs Process
- Cho, Won-Yong (Kwangwoon Univ.) ;
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Kim, Nam-Young
(Kwangwoon Univ.)
- 발행 : 2008.06.19
초록
In this paper, a MMIC diplexer with a low pass and high pass filter are designed and fabricated using an InGaP/GaAs process. The design of this diplexer is based on its stabilization of the low insertion loss since it is important in the in-building system (IBS). The IBS integrates wire and wireless signal between the cable television (CATV) and the personal communication system. In this design, a dual-mode operation of diplexer is fabricated with the frequency of 0 Hz to 900 MHz and 1.7 GHz to 2.2 GHz for CATV and personal communication. respectively. The topolygy of the designed diplexer is based on the L-C filter. This diplexer fabricated by nanoENS Inc. which is foundry service company, was measured by using the facilities of the Kwangwoon University RFIC center. The fabricated chip size is