Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.144-144
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- 2008
Optical and microstructural behaviors in the GaN-based LEDs structures with the p-GaN layers grown at different growth temperatures
GaN 기반 LED구조의 p-GaN층 성장온도에 따른 광학적, 결정학적 특성 평가
- Kong, Bo-Hyun (Sungkyunkwan Univ.) ;
- Kim, Dong-Chan (Sungkyunkwan Univ.) ;
- Kim, Young-Yi (Sungkyunkwan Univ.) ;
- Han, Won-Suk (Sungkyunkwan Univ.) ;
- Ahn, Cheol-Hyoun (Sungkyunkwan Univ.) ;
- Choi, Mi-Kyung (Sungkyunkwan Univ.) ;
- Cho, Hyung-Koun (Sungkyunkwan Univ.) ;
- Lee, Ju-Young (Korea Maritime Univ.) ;
- Kim, Hong-Seung (Korea Maritime Univ.)
- 공보현 (성균관대학교) ;
- 김동찬 (성균관대학교) ;
- 김영이 (성균관대학교) ;
- 한원석 (성균관대학교) ;
- 안철현 (성균관대학교) ;
- 최미경 (성균관대학교) ;
- 조형균 (성균관대학교) ;
- 이주영 (한국해양대학교) ;
- 김홍승 (한국해양대학교)
- Published : 2008.06.19
Abstract
Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at