• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.55-58
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• 2022

Carbon-based doping to MgB₂ superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB₂ superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB₂ bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB₂ possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB₂ lattice. Also, high-field J_c for the doped MgB₂ is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.953-960
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• 1991

Effect of MgO doping was studied by measuring complex impedance of PZT[Pb(Zr0.52Ti0.48)O3] samples doped with 0.25~6 mol% MgO. Electrical conductivity of PZT samples increased within 1.5 mol% of MgO doping. However above 1.5 mol%, no noticeable changes were found. Activation energy and pre-exponential factor of electrical conductivity were found to decrease within 1.5 mol% of MgO doping, but increase above 1.5 mol%. Therefore it was concluded that the decrease of electrical conductivity with MgO doping was due to the decrease of activation energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.459-459
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• 2013

Si (111) 기판 위에 plasma assisted molecular beam epitaxy 법으로 Si과 Mg doping된 GaN 나노막대를 각 각 성장하고 나노막대의 모양과 광학적 특성을 조사하였다. Si이 doping된 GaN 나노막대는 biaxial m-plane 방향의 변화로 별 모양을 갖는 것을 관찰하였고 Mg doping된 GaN 나노막대의 지름은 줄어드는 것을 scanning electron microscopy로 확인하였다. 본 연구에서는 이러한 변화의 원인을 stress 때문으로 보고 x-ray diffraction과 raman scattering 측정을 통하여 구조적 변화를 조사하였다. 또한, stress에 의한 GaN 나노막대의광학적 특성 변화를 photoluminescence을 통하여 조사하였다. Doping한 GaN 나노막대의 특성조사를 통해 GaN 나노막대 성장 시 발생되는 stress의 영향을 이해하는데 중요한 정보를 제공할 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.13-13
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• 2008

• Journal of Powder Materials
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• v.27 no.2
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• pp.146-153
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• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Archives of Pharmacal Research
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• v.17 no.6
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• pp.428-433
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• 1994

The methabolism and phamacokinetics of a mixed disulfide S-(N, N-diethyldithiocarbamoyl)-N-acetyl-L-cysteine (AC-DDTC) were studied in rats. Two metabolites of AC-DDTC following iv and po administration were indentified in plasma and liver by HPLC and GC, namely N, N-diethyldithiocarbamate (DDTC) and the methyl ester of DDTC (Me-DDTC). AC-DDTC was very unstable in vivo and could not be detected neither in plasma nor in urine. Pharmacokinetic parameters of DDTC following intravenous administration of AC-DDTC (20 mg/kg) were calculated. DDTC has a low affinity to rat tissue and the body clearance was $9.0{\pm}3.4mkl/mim/kg$. The mean residence time (MRT) was $11.5{\pm}16.3 min$. After oral administration of 20 mg/kg AC-DDTC, maximal plasma concenttion ($C_{max}$) was $3.8{\pm}0.2 nmol/ml$ and the bioavailability was 7.04%. $C_{max}$ for DDTC at a dose of 120 mg/kg. AC-DDTC was $40.1{\pm}2.2 nmol/ml$. ART was $47.1{\pm}2.8min$.at a dose of 20 mg/kg and $110.5{\pm}6.0 min$ at 120 mg/kg.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.