한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.84-84
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- 2008
p형 Si 기판위에 성장된 ZnO 다층형복합구조의 이종접합구조 LED 제작
Multidimensional ZnO light-emitting diode structures grown by metal organic chemical vapor deposition on p-Si
- 김동찬 (성균관대학교) ;
- 공보현 (성균관대학교) ;
- 한원석 (성균관대학교) ;
- 최미경 (성균관대학교) ;
- 조형균 (성균관대학교) ;
- 이종훈 (한국해양대학교) ;
- 김홍승 (한국해양대학교)
- Kim, Dong-Chan (Sungkyunkwan Univ.) ;
- Kong, Bo-Hyun (Sungkyunkwan Univ.) ;
- Han, Won-Suk (Sungkyunkwan Univ.) ;
- Choi, Mi-Kyung (Sungkyunkwan Univ.) ;
- Cho, Hyung-Koun (Sungkyunkwan Univ.) ;
- Lee, Jong-Hun (Korea Maritime Univ.) ;
- Kim, Hong-Seung (Korea Maritime Univ.)
- 발행 : 2008.06.19
초록
A multidimensional ZnO light-emitting diode LEDstructure comprising film/nanorods/substrate was fabricated on a p-type Si substrate using metal organic chemical vapor deposition at relatively low growth temperature. The filmlike top layer used for the metal contact was continuously formed on the ZnO nanorods by varying the growth conditions and the resulting structure allowed us to utilize the nanorods with intense emission as an active layer. We investigated the performance of the resulting multidimensional LED. An extremely high breakdown voltage and low reverse leakage current as well as typical rectification behavior were observed in the I-V characteristics.