한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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- Pages.25-26
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- 2008
n-GaAs의 V/III족 비율에 따른 오믹 저항 연구
A study on the Ohmic contact resistance as function of V/III ratio of n-GaAs
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김인성
(한국광기술원) ;
- 김상택 (한국광기술원) ;
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김선훈
(한국광기술원) ;
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기현철
(한국광기술원) ;
-
고항주
(한국광기술원) ;
-
김회종
(한국광기술원) ;
- 전경남 (광주대학교) ;
- 김효진 (한국광기술원)
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Kim, In-Sung
(Korea Photonics Technology Institute) ;
- Kim, Sang-Taek (Korea Photonics Technology Institute) ;
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Kim, Seon-Hoon
(Korea Photonics Technology Institute) ;
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Ki, Hyun-Chul
(Korea Photonics Technology Institute) ;
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Ko, Hang-Ju
(Korea Photonics Technology Institute) ;
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Kim, Hwe-Jong
(Korea Photonics Technology Institute) ;
- Jun, Gyeong-Nam (Gwangju University) ;
- Kim, Hyo-Jin (Korea Photonics Technology Institute)
- 발행 : 2008.06.19
초록
Electrical properties of Pt/Ti/Au/Pt contacts to n-GaAs were characterized as the V/III ratio of GaAs grown by metalorganic chemical vapor deposition were 25, 50, and 100, respectively. The samples have been annealed during 30sec at 350 and