한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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태양전지용 ZnO:Al 박막의 wet etching 에 따른 특성 변화

  • 정유섭 (경원대학교 전기공학과) ;
  • 김상모 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Jung, Yu-Sup (Department of Electrical Engineering, Kyungwon Univ.) ;
  • Kim, Sang-Mo (Department of Electrical Engineering, Kyungwon Univ.) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon Univ.)
  • 발행 : 2008.11.06
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초록

Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

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