Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.24-25
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- 2008
Effect of heat treatment in $HfO_2$ as charge trap with engineered tunnel barrier for nonvolatile memory
비휘발성 메모리 적용을 위한 $SiO_2/Si_3N_4/SiO_2$ 다층 유전막과 $HfO_2$ 전하저장층 구조에서의 열처리 효과
- Park, Goon-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Jung, Jong-Wan (Department of Nano Science and Technology, Sejong Univ.) ;
- Chung, Hong-Bay (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
- Published : 2008.11.06
Abstract
The effect of heat treatment in