한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.831-833
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- 2008
Wet Etching Behaviors of Transparent Conducting Ga-Doped Zinc Oxide Thin Film by Organic Acid Solutions
- Lee, Dong-Kyoon (Dept. of Materials Science and Engineering, Hongik University) ;
- Lee, Seung-Jung (LG Research Park, LG Chem. Ltd.) ;
- Bang, Jung-Sik (LG Research Park, LG Chem. Ltd.) ;
- Yang, Hee-Sun (Dept. of Materials Science and Engineering, Hongik University)
- Published : 2008.10.13
Abstract
150 nm thick Ga-doped ZnO thin film, which was deposited by a sputtering process, was wet-chemically etched by using various organic acids such as oxalic, citric and formic acid. Wet etch parameters including etchant concentration and temperature are investigated for each etchant, and their effects on the etch rate and the feature of edge line are compared.