한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.9-12
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- 2008
Views on the low-resistant bus materials and their process architecture for the large-sized & post-ultra definition TFT-LCD
- Song, Jean-Ho (LCD Technology Center, Samsung Electronics co., LTD) ;
- Ning, Hong-Long (LCD Technology Center, Samsung Electronics co., LTD) ;
- Lee, Woo-Geun (LCD Technology Center, Samsung Electronics co., LTD) ;
- Kim, Shi-Yul (LCD Technology Center, Samsung Electronics co., LTD) ;
- Kim, Sang-Soo (LCD Technology Center, Samsung Electronics co., LTD)
- Published : 2008.10.13
Abstract
For the large-sized and post-ultra definition TFT-LCD, improved drivability is prerequisite not only for the integration of driving circuit on glass but also for the chargeability of each pixel. In order to meet required drivability, currently adopted process architecture and materials are modified for the RC delay reduction, including the drastic increase of gate bus thickness and its related solution for step coverage. We present new process architecture and material selection for the next generation TFT-LCD devices.