대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2008년도 제39회 하계학술대회
- /
- Pages.1272-1273
- /
- 2008
상부전극 접촉면 크기에 따른 PRAM cell의 지우기 전류 특성
Reset current of PRAM cell with top electrode contact size
- Choi, Hong-Kyw (Korea Maritime University) ;
-
Jang, Nak-Won
(Korea Maritime University)
;
- Lee, Seong-Hwan (Korea Maritime University) ;
-
Yi, Dong-Young
(Uiduk University)
;
- Mah, Suk-Bum (Young-In Songdam College)
- 발행 : 2008.07.16
초록
PRAM(Phase change access memory) has desirable characteristics including high speed, low cost, low power, and simple process. PRAM is based on the reversible phase transition between resistive amorphous and conductive crystalline states of chalcogenide. However, PRAM needs high reset current for operation. PRAM have to reduce reset current for high density and competitiveness. Therefore, we have investigated the reset current of PRAM with top electrode contact hole size using 3-D finite element analysis tool in this paper.
키워드