3차원 실장을 위한 Non-PR 직접범핑법

Non-PR direct bumping for 3D wafer stacking

  • 전지헌 (서울시립대학교 마이크로조이닝 연구실) ;
  • 홍성준 (서울시립대학교 마이크로조이닝 연구실) ;
  • 이기주 (서울시립대학교 마이크로조이닝 연구실) ;
  • 이희열 (서울시립대학교 마이크로조이닝 연구실) ;
  • 정재필 (서울시립대학교 마이크로조이닝 연구실)
  • 발행 : 2007.11.15

초록

Recently, 3D-electronic packaging by TSV is in interest. TSV(Through Silicon Via) is a interconnection hole on Si-wafer filled with conducting metal such as Copper. In this research, chips with TSV are connected by electroplated Sn bump without PR. Then chips with TSV are put together and stacked by the methode of Reflow soldering. The stacking was successfully done and had no noticeable defects. By eliminating PR process, entire process can be reduced and makes it easier to apply on commercial production.

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