한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)
- 한국표면공학회 2007년도 춘계학술발표회 초록집
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- Pages.78-79
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- 2007
Effects of $N_2$ addition on chemical etching of silicon nitride layers in $F_2/Ar/N_2$ remote plasma processing
- Park, S.M. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Kim, H.W. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Kim, S.I. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Yun, Y.B. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
- Lee, N.E. (Dept. of Materials Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
- 발행 : 2007.04.05
초록
In this study, chemical dry characteristics of silicon nitride layers were investigated in the
키워드