Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Design and Fabrication of ZnO Based UV Photodetector with p-type Inversion Layer

p형 반전층을 갖는 ZnO계 자외선 수광소자의 설계 및 제작에 관한 연구

  • Oh, Sang-Hyun (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
  • Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang Univ.)
  • 오상현 (원광대학교 전기전자 및 정보공학부) ;
  • 김호걸 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.06.21
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Abstract

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by. RF sputtering system. Substrate temperature and work pressure is $100^{\circ}C$ and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. For sample deposited at $300^{\circ}C$, we observed full width at half maximum (FWHM) of 0.240 and good surface morphology.

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