한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Characteristics of Si impurity doped MgO in an ac PDP

  • Ha, Chang-Hoon (Plasma laboratory, School of Electrical Engineering, Seoul National University) ;
  • Kim, Joong-Kyun (Department of electrical engineering, Hankyong National University) ;
  • Whang, Ki-Woong (Plasma laboratory, School of Electrical Engineering, Seoul National University)
  • 발행 : 2007.08.27
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초록

In this work, the discharge characteristics and temporal distribution of surface charges on the Sidoped MgO have been investigated and elucidated with the results of photon-induced surface current. Even though the Si doped MgO shows lower static voltage margin, higher luminous efficacy, and shorter statistical delay time, its discharge characteristics become deteriorated as the timing of scanning is delayed from the ramp type reset pulse down. Overall features of Si-doped MgO in discharge characteristics are well correlated with surface current characteristics.

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