한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

The discharge characteristic of Li ion doped MgO film in a flat fluorescent lamp structure

  • Ryu, Si-Hong (Dept. of Advanced Materials Engineering in Korea Polytechnic Univ.) ;
  • Lee, Seong-Eui (Dept. of Advanced Materials Engineering in Korea Polytechnic Univ.) ;
  • Ahn, Sung-Il (Dept. of Electrical and Electronic Engineering, Kyungwon Univ.) ;
  • Choi, Kyung-Cheol (Dept. of Electrical Engineering and Computer, Korea Advanced Institute of Science and Technology)
  • 발행 : 2007.08.27
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초록

This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

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