Effects of Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

  • Kim, Doo-Hyun (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, D.W. (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, K.S. (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Moon, J.S. (Dept. of Display and Semiconductor Physics, Korea University) ;
  • KIM, H.J. (Dept. of Display and Semiconductor Physics, Korea University) ;
  • Kim, D.C. (Industrial Application Plasma Lab., National Fusion Research Center) ;
  • Oh, K.S. (Industrial Application Plasma Lab., National Fusion Research Center) ;
  • Lee, B.J. (Industrial Application Plasma Lab., National Fusion Research Center) ;
  • You, S.J. (Industrial Application Plasma Lab., National Fusion Research Center) ;
  • Choi, S.W. (Dept. of Information Tech., Handong Global University) ;
  • Park, Y.C. ;
  • Kim, B.S. (LCD Business Unit, Samsung Electronics Corp.) ;
  • Shin, J.H. (LCD Business Unit, Samsung Electronics Corp.) ;
  • Kim, Y.M. (LCD Business Unit, Samsung Electronics Corp.) ;
  • Shin, S.S. (LCD Business Unit, Samsung Electronics Corp.) ;
  • Hong, Mun-Pyo (Dept. of Display and Semiconductor Physics, Korea University)
  • Published : 2007.08.27

Abstract

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

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