한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 추계학술대회 논문집
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- Pages.171-172
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- 2007
Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistor Using an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$ /Si Structure
- Jeon, Ho-Seung (School of Electrical and Computer Engineering University of Seoul) ;
- Lee, Gwang-Geun (School of Electrical and Computer Engineering University of Seoul) ;
- Kim, Joo-Nam (School of Electrical and Computer Engineering University of Seoul) ;
- Park, Byung-Eun (School of Electrical and Computer Engineering University of Seoul) ;
- Choi, Yun-Soo (Department of Geo-Informatics, University of Seoul)
- 발행 : 2007.11.01
초록
We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the