Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thickness Effects on Electrical Properties of PVDF-TrFE (51/49) Copolymer for Ferroelectric Thin Film Transistor

  • Kim, Joo-Nam (School of Electrical and Computer Engineering, University of Seoul) ;
  • Jeon, Ho-Seung (School of Electrical and Computer Engineering, University of Seoul) ;
  • Han, Hui-Seong (School of Electrical and Computer Engineering, University of Seoul) ;
  • Im, Jong-Hyung (School of Electrical and Computer Engineering, University of Seoul) ;
  • Park, Byung-Eun (School of Electrical and Computer Engineering, University of Seoul) ;
  • Kim, Chul-Ju (School of Electrical and Computer Engineering, University of Seoul)
  • Published : 2007.11.01
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Abstract

In this study, polyvinylidene fluoride/trifluoroethylene (PVDF-TrFE) was investigated. For a metal-ferroelectic-metal (MFM) structure, We obtained that the 70 nm-thick film showed the maximum polarization of $8.24\;{\mu}C/cm^2$, 2Pr of $6\;{\mu}C/cm^2$ and the coercive voltage of ${\pm}3.1\;V$ at 12 V. The 140 nm-thick film showed higher performance. However, the thicker film required a higher voltage. The current density was $10^{-6}{\sim}10^{-7}\;A/cm^2$ under 15 V. We can expect from these results that the electrical properties of the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer, be able to be on the trade-off relationship between the remanent polarization and the leakage current.

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