Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.04a
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- Pages.89-90
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- 2006
EO performance of IPS cell on the inorganic films surface using DuoPIGatron ion source
유기박막표면에 DuoPIGatron 이온소스를 이용한 IPS 셀의 전기광학 특성
- Kim, Byoung-Yong (Yonsei Univ.) ;
- Hwang, Jeoung-Yeon (Yonsei Univ.) ;
- Kim, Sang-Hun (Yonsei Univ.) ;
- Han, Jung-Min (Yonsei Univ.) ;
- Seo, Dae-Shik (Yonsei Univ.)
- Published : 2006.04.28
Abstract
Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.
Keywords
- DuoPIGatrion ion source;
- in-plane switching (IPS);
- polyimide surface;
- Electro-optical (EO) characteristics