• Title/Summary/Keyword: DuoPIGatrion ion source

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EO performance of IPS cell on the inorganic films surface using DuoPIGatron ion source (유기박막표면에 DuoPIGatron 이온소스를 이용한 IPS 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.89-90
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    • 2006
  • Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

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EO performance of TN cell on the inorganic films surface using DuoPIGatron ion source on NDLC thin film (무기박막표면에 DuoPIGatron 이온소스를 이용한 TN-LCD 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.432-433
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    • 2006
  • Electro-optical (EO) characteristics of twisted nematic (TN) - liquid crystal display (LCD) on the NDLC thin film using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin film was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-cell on polyimide surface ; the stable VT curve in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained.

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