Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The Effect of Citric Acid on Copper Chemical Mechanical Polishing

구연산이 Copper Chemical Mechanical Polishing에 미치는 영향

  • 정원덕 (부산대학교 정밀기계공학과) ;
  • 박범영 (부산대학교 정밀기계공학과) ;
  • 이현섭 (부산대학교 정밀기계공학과) ;
  • 이상직 (부산대학교 정밀기계공학과) ;
  • 장원문 (부산대학교 정밀기계공학과) ;
  • 박성민 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2006.06.22
Download PDF
⟨ Previous Next ⟩

Abstract

Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.

Keywords