한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Spectroscopic Ellipsometry of Si/graded-$Si_{1-x}Ge_x$/Si Heterostructure Films Grown by Reduced Pressure Chemical Vapor Deposition

  • Seo, J.J. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University) ;
  • Choi, S.S. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University) ;
  • Yang, H.D. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University) ;
  • Kim, J.Y. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University) ;
  • Yang, J.W. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University) ;
  • Han, T.H. (R&D Center, Tachyonics) ;
  • Cho, D.H. (R&D Center, Tachyonics) ;
  • Shim, K.H. (Department or Semiconductor Science and Technology, Semiconductor Physics Research Center Chonbuk National University)
  • 발행 : 2006.06.22
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초록

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

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