Growth and Photoluminescience Properties for $CuInSe_2$ single crystal thin film

$CuInSe_2$ 단결정 박막 성장과 광발광 특성

$CuInSe_2$ single crystal thin films was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;153K)$. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.