한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.167-168
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- 2006
선택적 분자선 에피택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현
Realization of 1D-2DEG Composite Nanowire FET by Selective Area Molecular Beam Epitaxy
- Kim, Yun-Joo (Korea University) ;
- Kim, Eun-Hong (Korea University) ;
- Seo, Yoo-Jung (Korea University) ;
- Kim, Dong-Ho (Korea University) ;
- Hahn, Cheol-Koo (KETI) ;
- Ogura, Mutsuo (AIST) ;
- Kim, Tae-Geun (Korea University)
- 발행 : 2006.06.22
초록
High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (