Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on the ultra thin film of silicon oxyinitride deposited by plasma - assisted $N_2O$ oxidation in ICP-CVD reactor

ICP-CVD 반응기 내에서 $N_2O$ 플라즈마 산화법을 이용하여 증착된 ultra thin silicon oxynitride films 에 관한 연구

  • Hwang, Sung-Hyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jung, Sung-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, J. (School of Information and Communication Engineering, Sungkyunkwan University)
  • 황성현 (성균관대학교 정보통신공학부) ;
  • 정성욱 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2006.06.22
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Abstract

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

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