한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
- /
- Pages.150-151
- /
- 2006
$Si_{0.88}Ge_{0.12}$ 이종접합 구조의 채널을 이용한 n-MOSFET의 DC 특성
DC Characteristics of n-MOSFET with $Si_{0.88}Ge_{0.12}$ Heterostructure Channels
- 최상식 (반도체물성연구소, 반도체과학기술학과, 전북대학교) ;
-
양현덕
(반도체물성연구소, 반도체과학기술학과, 전북대학교) ;
- 한태현 ((주) 타키오닉스) ;
-
조덕호
((주) 타키오닉스) ;
- 이내응 (성균관대학교) ;
-
심규환
(반도체물성연구소, 반도체과학기술학과, 전북대학교)
- Choi, Sang-Sik (Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University) ;
-
Yang, Hyun-Duk
(Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University) ;
- Han, Tae-Hyun (Tachyonics) ;
-
Cho, Deok-Ho
(Tachyonics) ;
- Lee, Nae-Eung (Sungkyunkwan University) ;
-
Shim, Kyu-Hwan
(Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University)
- 발행 : 2006.06.22
초록