Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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DC Characteristics of n-MOSFET with $Si_{0.88}Ge_{0.12}$ Heterostructure Channels

$Si_{0.88}Ge_{0.12}$ 이종접합 구조의 채널을 이용한 n-MOSFET의 DC 특성

  • Choi, Sang-Sik (Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University) ;
  • Yang, Hyun-Duk (Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University) ;
  • Han, Tae-Hyun (Tachyonics) ;
  • Cho, Deok-Ho (Tachyonics) ;
  • Lee, Nae-Eung (Sungkyunkwan University) ;
  • Shim, Kyu-Hwan (Semiconductor Physics Research Institute, Department of Semiconductor Science and Technology Chonbuk National University)
  • 최상식 (반도체물성연구소, 반도체과학기술학과, 전북대학교) ;
  • 양현덕 (반도체물성연구소, 반도체과학기술학과, 전북대학교) ;
  • 한태현 ((주) 타키오닉스) ;
  • 조덕호 ((주) 타키오닉스) ;
  • 이내응 (성균관대학교) ;
  • 심규환 (반도체물성연구소, 반도체과학기술학과, 전북대학교)
  • Published : 2006.06.22
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Abstract

$Si_{0.88}Ge_{0.12}$/Si heterostructure channels grown by RPCVD were employed to n-type metal oxide semiconductor field effect transistors(MOSFETs), and their electrical properties were investigated. SiGe nMOSFETs presented very high transconductance compared to conventional Si-bulk MOSFETs, regardless substantial drawbacks remaining in subthreshold-slope, $I_{off}$, and leakage current level. It looks worthwhile to utilize excellent transconductance properties into rf applications requesting high speed and amplification capability, although optimization works on both device structure and unit processes are necessary for enhanced isolation and reduced power dissipation.

Keywords