한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.57-58
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- 2006
Cu ECMP 공정에서의 전해질 특성평가
Characterization of Electrolyte in Electrochemical Mechanical Planarization
- Kwon, Tae-Young (Hanyang Univ.) ;
- Kim, In-Kwon (Hanyang Univ.) ;
- Park, Jin-Goo (Hanyang Univ.)
- 발행 : 2006.06.22
초록
Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.