Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.368-369
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- 2006
Properties of $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Thin Film Capacitors Fabricated by Damascene Process
Damascene 공정으로 제조한 $Bi_{3.25}La_{0.75}Ti_3O_{12}$ 박막 캐패시터 소자 특성
- Shin, Sang-Hun (chosun Univ.) ;
- Kim, Nam-Hoon (Sungkyunkwan Univ.) ;
- Lee, Woo-Sun (chosun Univ.)
- Published : 2006.11.09
Abstract
Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of