Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.110-111
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- 2006
Electrical Resistance Characteristic of Ag/As-Ge-Se-S Thin film with Laser Irradiation
레이저 조사에 의한 Ag/As-Ge-Se-S 박막의 전기적 저항특성
- Koo, Yong-Woon (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
- Kim, Jin-Hong (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
- Koo, Sang-Mo (Dept. of Electronic Materials Eng. Kwangwoon Univ.) ;
- Chung, Hong-Bay (Dept. of Electronic Materials Eng. Kwangwoon Univ.)
- Published : 2010.04.01
Abstract
In this paper, we investigated resistance characteristic of chalcogenide material for next generation ReRAM nonvolatile memory device with laser irradiation. A AES is used to test Ag doping ratio into a As-Ge-Se-S thin film. A sample resistance was observed in real time with He-Ne laser(632.8nm). As a result, resistance of thermal treated As-Ge-Se-S thin film was