Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.57-58
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- 2006
Development and Characterization of Ru CMP Slurry
Ru CMP Slurry의 개발 및 특성평가
- Kim, In-Kwon (Hanyang Univ.) ;
- Kwon, Tae-Young (Hanyang Univ.) ;
- Park, Jin-Goo (Hynix Semiconductor Inc.) ;
- Park, Hyung-Soon (Hynix Semiconductor Inc.)
- Published : 2010.04.01
Abstract
In MIM (metal insulator metal) capacitor, Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed m order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as functions of chemical A concentration, abrasive particle and pressure. Chemical A was used as oxidant and etchant. The thickness of passivation layer on the treated Ru surface increased with the increase of chemical A concentration. The etch rate and removal rate of Ru were increased by the addition of chemical A. The removal rate was highest m slurry of pH 9 with the addition of 0.1 M chemical A and 2 wt% alumina at 4 psi. The maximum removal rate is about 80 nm/min.