한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

Microstructural Analysis of Directionally Solidified Materials Obtained via Line-Scan SLS of Si Films

  • Chung, U.J. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Limanov, A.B. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Wilt, P.C. Van Der (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Chitu, A.M. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University) ;
  • Im, James S. (Program in Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University)
  • 발행 : 2006.08.22
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Line-scan SLS of thin Si films permits the attainment of low-defect-density Si films with a directionally solidified microstructure. This paper deals with: (1) identifying and examining the structural defects that are found in the resultant material, (2) how the spatial variations in the type and density of the observed defects may potentially affect the overall uniformity of the resulting devices, and (3) some technical options that may be applied in order to potentially alleviate the situation.

키워드