Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Linearity Optimization of DG MOSFETs for RF Applications

  • Kim, Dong-Hwee (School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
  • Published : 2005.11.26
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Abstract

RF linearity of double-gate MOSFETs is investigated using accurate two-dimensional simulations. The linearity has been analyzed using the Talyor series. Transconductance is dominant nonlinear source of CMOS. It is shown that DGMOSFET linearity can be improved by a careful optimization of channel thickness, gate oxide thickness, gate length, overlap length and channel doping concentration. The minimum $P_{IP3}$ data are compared in each case. It is shown that DG-MOSFET linearity can be improved by a careful optimization of channel thickness, gate oxide thickness, gate length, overlap length and channel doping concentration..

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