한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
- /
- Pages.164-165
- /
- 2005
GaAs/AlGaAs와 GaAs/InGaP의 건식 식각 시 Flourine 이온의 효과
F Ion-Assisted Effect on Dry Etching of GaAs over AlGaAs and InGaP
- 장수욱 (인제대학교 나노공학부/나노기술 응용센터) ;
- 박민영 (인제대학교 나노공학부/나노기술 응용센터) ;
- 최충기 (인제대학교 나노공학부/나노기술 응용센터) ;
- 유승열 (인제대학교 나노공학부/나노기술 응용센터) ;
-
이제원
(인제대학교 나노공학부/나노기술 응용센터) ;
- 승한정 (인제대학교 나노공학부/나노기술 응용센터) ;
-
전민현
(인제대학교 나노공학부/나노기술 응용센터)
- Jang, Soo-Ouk (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Park, Min-Young (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Choi, Chung-Ki (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Yoo, Seung-Ryul (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
-
Lee, Je-Won
(School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
- Song, Han-Jung (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
-
Jeon, Min-Hyon
(School of Nano Eng./Center of Nano-Technology Applications INJE Univ.)
- 발행 : 2005.07.07
초록
The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled