Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.101-102
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- 2005
Analysis of the Electrical Characteristics of 4H-SiC LDMOSFET
4H-SiC RESURF LDMOSFET 소자의 전기적 특성분석
-
Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute)
;
-
Kim, Sang-Cheol
(Korea Electrotechnology Research Institute)
;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
-
Kim, Nam-Kyun
(Korea Electrotechnology Research Institute)
;
-
Seo, Kil-Soo
(Korea Electrotechnology Research Institute)
;
-
Kim, Enn-Dong
(Korea Electrotechnology Research Institute)
- Published : 2005.07.07
Abstract
SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.